tsm 2n60e 600 v , 2a, 4 n - channel power mosfet 1 / 7 version: a14 to - 251 (ipak) to - 252 (dpak) key parameter performance parameter value unit v ds 6 00 v r ds(on) (max) 4 qg ( typ ) 9 .5 nc features 100% avalanche tested g - s esd protection diode embedded ordering information part no. packag e packing tsm 2n60e c h c5 g to - 2 5 1 75 pcs / tube tsm 2n60e c p rog to - 2 52 2.5kpcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds a bsolute maximum rating s ( t c = 25 unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 600 v gate - source voltage v gs 3 0 v continuous drain current (note 1 ) t c = 25 i d 2 a t c = 100 1.43 a pulsed drain current (note 2 ) i dm 8 a repetitive avalanche current (note 1 ) i a r 2 a repetitive avalanche energy (note 1 ) e a r 5.2 a single pulse avalanche energy (note 3 ) e as 66 mj total power dissipation t c = 25 p d 52.1 w derate above t c = 25 0.416 w/ peak diode recovery d v /dt (note 4 ) d v /dt 4 . 5 v/ns operati ng junction temperature t j - 55 to +150 storage temperature range t stg - 55 to +150 thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 2.4 /w thermal resistance - junction to ambient r ? ja 110 /w block diagram n - channel mosfet with esd protection pin definition : 1. gate 2. drain 3. source
tsm 2n60e 600 v , 2a, 4 ? n - channel power mosfet 2 / 7 version: a14 electrical specifications ( t c = 25 ! unless otherwise noted ) parameter conditions symbol min typ max u nit static (note 5) drain - source breakdown voltage v gs = 0 v, i d = 250a bv dss 600 -- -- v drain - source on - state resistance v gs = 10v, i d = 1 a r ds(on) -- 3. 2 4 ? g ate threshold voltage v ds = v gs , i d = 250a v gs(th) 3 -- 5 v zero gate voltage drain current v ds = 60 0v, v gs = 0v i dss -- -- 1 a v ds = 480 v, t j = 125 ! -- -- 10 gate body leakage v gs = 3 0v, v ds = 0v i gss -- -- 100 a forward transconductance v ds = 3 0v, i d = 1 a g fs -- 3 -- s dynamic (note 6 ) total gate charge v ds = 480 v, i d = 2 a, v gs = 10 v q g -- 9 .5 -- nc gate - source charge q gs -- 2 .1 -- gate - drain charge q gd -- 3.9 -- input capacitance v ds = 25 v, v gs = 0v, f = 1mhz c iss -- 36 2 -- pf ou tput capacitance c oss -- 4 0 -- reverse transfer capacitance c rss -- 7 .2 -- switching (note 7 ) turn - on delay time v dd = 300 v , v gs = 10v , r g = 25 w , i d = 2 a t d(on) -- 2 1 -- ns turn - on rise time t r -- 2 2 -- turn - off delay time t d(off) -- 4 1 -- turn - off fall time t f -- 21 -- source - drain diode ratings and characteristic (note 5 ) maximum continuous drain - source diode forward current i s -- -- 2 a maximum pulse drain - source diode forward current i s m -- -- 8 a diode - source forward voltage v gs = 0v , i s = 2 a v sd -- -- 1 .5 v reverse recovery time v gs = 0v , i s = 2a di f /dt = 100a/s t rr -- 2 38 -- ns reverse recovery charge q rr -- 0.8 -- n c notes: 1. current limited by package 2. pulse width limited by the m aximum junction temperature 3. v dd = 5 0 v, l= 30 .5mh , i as = 2 a , r g = 25 w , starting t j = 25 ! 4. i s d "d 2a, di/dt "d 200a/ s , v dd "d bv ds , starting t j = 25 ! 5. p ulse test: pw "d 300s , d u ty cycle "d 2% 6. for design aid only, not subject to production testing. 7. switching time is essentially independent of operating temp erature.
tsm 2n60e 600 v , 2a, 4 ? n - channel power mosfet 3 / 7 version: a14 electrical characteristics curves ( t c = 2 5 ! , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm 2n60e 600 v , 2a, 4 ? n - channel power mosfet 4 / 7 version: a14 electrical characteristics curve ( t c = 25 ! , unless otherwise noted ) drain current vs. case temperature bv dss vs. junction temperature threshold voltage vs. junction temperature capacitance vs. drain - source voltage maximum safe oper ating area normalized transient impedance
tsm 2n60e 600 v , 2a, 4 ? n - channel power mosfet 5 / 7 version: a14 to - 251 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =n ov, z =dec) l = lot code
tsm 2n60e 600 v , 2a, 4 ? n - channel power mosfet 6 / 7 version: a14 to - 252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =d ec) l = lot code
tsm 2n60e 600 v , 2a, 4 ? n - channel power mosfet 7 / 7 version: a14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any e rrors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sal e for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infring ement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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